400-1100nm 1.2mm Silicon PIN Photodetector Diode High Responsivity LowDark Current
Specification:
Photosensitive surface area: 1.2m × 1.2mm
Response wavelength: 400-1100nm
Dark current: 0.2nA@-5V
Rise time: 1.4ns@-5V, 50Ω
Responsiveness: 0.2mA/mW@1064nm
0.5mA/mW@850nm
0.35mA/mW@650nm
Application:
1. Optical sensor 2. Optical power meter 3. Industrial automation control 4. Scientific analysis and experiment 5. Space light detection equipment 6. Response spectrum test
Features:
High reliability, low dark current; photosensitive surface diameter 1.2x 1.2mm, TO5 package, optical interface optional.
Package:
1*400-1100nm 1.2mm Silicon PIN Photodetector Diode High Responsivity LowDark Current
